| PART |
Description |
Maker |
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| ZXTP25100CZ-16 |
100V PNP MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| BD746C-S |
PNP TRANSISTOR 100V 40A 20 A, 100 V, PNP, Si, POWER TRANSISTOR
|
Bourns, Inc.
|
| ZXTP19100CZ-15 |
100V PNP MEDIUM POWER TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| MJD41C MJD42C MJD42CRL |
Power 6A 100V PNP
Complementary Power Transistors
|
ONSEMI[ON Semiconductor]
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| ZXTP2013GTA ZXTP2013GTC ZXTP2013G |
100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SC4342M 2SC4342-K-AZ |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁| 3A条一（c）|26
3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
|
NEC, Corp.
|
| IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A)
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
