PART |
Description |
Maker |
TA0525A |
SAW Filter 415.4MHz SMD 3.8×3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
MH32D72KLH-10 MH32D72KLH-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module 2 /415 /919 /104-BIT (33 /554 /432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH32S72BBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH32S72DBFA-8 MH32S72DBFA-7 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH32S72PHB-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH32S72AQJA-8 MH32S72AQJA-7 B00008 |
From old datasheet system 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH32D72KLH-10 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
2N7288H 2N7288R 2N7288D FN3609 |
Radiation Hardened N-Channel Power MOSFETs 9 A, 250 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA From old datasheet system
|
ON Semiconductor INTERSIL[Intersil Corporation]
|
STP77N6F6 |
N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package
|
STMicroelectronics
|
MH32S72APHB-7 MH32S72APHB-8 MH32S72APHB-6 |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:16VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:6900uF RoHS Compliant: Yes Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:100VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:78uF RoHS Compliant: Yes 2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|
ACA-ZIF-056 |
drawing
|
Lotes
|