| PART |
Description |
Maker |
| FQA19N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW620B IRFI620B IRFI620BTUFP001 IRFW620BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW620A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFI620A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFNL210B EA0610P |
200V N-Channel MOSFET
200V N-Channel B-FET TO-92L
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI13N50CTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 13 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS650B IRFS650BFP001 |
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFS650A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP9N50C FQPF9N50C FQPF9N50CT |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB9N50C FQI9N50C FQB9N50CTM FQI9N50CTU |
500V N-Channel Advance Q-FET C-Series
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
