| PART |
Description |
Maker |
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| MP4411 |
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| 2SK439 2SK439E K439 |
Silicon N Channel MOS FET
Silicon N-Channel MOS FET 硅N沟道场效应晶体管
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK
2SK439
|
Hitachi,Ltd.
Sanyo Semicon Device
Hitachi Semiconductor
|
| RJK0364DPA RJK0364DPA-00-J0 |
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0366DPA RJK0366DPA-00-J0 |
25 A, 30 V, 0.0168 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
| RJK1212DNS-00-J5 |
Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
|
Renesas Electronics Corporation
|
| HAT1021R-EL-E HAT1021R-15 |
5.5 A, 20 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
