| PART |
Description |
Maker |
| APC5890 |
APC5890 DE-COMPRESSION VOICE IC
|
Aplus Integrated Circuits Inc.
Apuls Intergrated Circuits
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| W562S60 W562S99 W562S25 W562S50 W562S08 W562S30 W5 |
Dual-Tone Melody Generator With Voice Synthesizer(带话音合成器的双音音乐发生器)
BandDirectorTM Family
From old datasheet system
Voice & Speech IC BandDirector
|
Winbond Electronics Corp
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| W583L02 W583L10 W583L15 W583L20 W583L25 W583L30 W5 |
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (99 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (80 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (60 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (50 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (40 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (30 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (25 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (20 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (15 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (10 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0 - R7, uC Interface, PWM/DAC, (2 min)
From old datasheet system
Voice & Speech IC PowerSpeech IC
|
Winbond Electronics
|
| SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
|
