| PART |
Description |
Maker |
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) CASE 29-4, STYLE 5TO-2 (TO-26AA) From old datasheet system JFET Switching
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MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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| 2N5460 2N5462 ON0061 2N5461 2N5460THRU2N5462 MOTOR |
JFET Amplifier P-Channel From old datasheet system CASE 29-4, STYLE 7TO-2 (TO-26AA) CASE 2904, STYLE 7 TO92 (TO226AA) 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
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ON Semiconductor MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
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| DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor CASE 463-01, STYLE 1 SOT-416/SC-90 CASE 463-1, STYLE 1 SOT-16/SC-0 From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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| BAS70LT1 ON0123 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) From old datasheet system 70VOLTS SCHOTTKY BARRIER DIODES CASE 318 08 STYLE 8 SOT 23 (TO 236AB)
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Motorola, Inc MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
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| BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-02/ STYLE 3 SOT-323/SC-70
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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| BAS40LT1 ON0121 BAS4 |
CASE 318-08, STYLE 8 SOT-23 TO-236AB SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 8 SOT-23 TO-236AB From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| 2003 |
Case Outline 55BT-1 / Style 1
|
GHZ Technology
|
| BAV70LT1 |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB)
|
Motorola Inc
|
| BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323 From old datasheet system
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Motorola, Inc. MOTOROLA[Motorola, Inc]
|
| BC182B BC182 BC183 BC184 ON0140 |
From old datasheet system CASE 29-4, STYLE 17 TO-2 (TO-26AA) Amplifier Transistors(NPN)
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MOTOROLA[Motorola, Inc] ON Semi
|
| RACM40-05S |
40 Watt Enclosed & Open Frame Case Style Single Output
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Recom International Pow...
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