| PART |
Description |
Maker |
| UT108N03G-TA3-T UT108N03L-TA3-T UT108N03L-TN3-R UT |
108 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB HALOGEN FREE, TO-220, 3 PIN
108 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB LEAD FREE, TO-220, 3 PIN
108 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE PACKAGE-3
108 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd.
|
| PHB153NQ08LT |
75 A, 75 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| SPB80N06S2-07 SPP80N06S2-07 SPI80N06S2-07 |
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
INFINEON[Infineon Technologies AG]
|
| IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters
Replaces Two Discrete MOSFETs
|
International Rectifier
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| IC-PD3948CHIP IC-PD3948OBGALSH2C IC-PD3948OQFN32-5 |
5-CHAN. PHASED ARRAY SINE ENCODER 39-2048
|
IC-Haus GmbH
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| TC514410AJ-60 TC514410AP TC514410AP-60 TC514410ASJ |
IC-7 CHAN. CMOS/TTL DR
1,048,576 x 4 BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
|
