| PART |
Description |
Maker |
| RFD10P03L RFD10P03 RFD10P03LSM RFD10P03LSM9A RFP10 |
10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET 10 A, 30 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET
10A 30V 0.200W Logic Level P-Channel Power MOSFET
10A, 30V, 0.200 OHM, LOGIC LEVEL P-CHANNEL POWER MOSFET
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
HARRIS[Harris Corporation]
|
| DE10S3L |
Schottky Rectifiers (SBD) (30V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| ITF86116SQT |
10A/ 30V/ 0.012 Ohm/ N-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| ITF86116SQT FN4808 |
10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET
From old datasheet system
|
Intersil
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| 2N1551A 2N2291 2N2295 2N2288 2N2296 2N1032A 2N1031 |
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 10A I(C) | TO-41
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 40V的五（巴西）总裁|5A一（c）|1
|
Central Semiconductor, Corp.
|
| RDN100N20 |
Switching (200V/ 10A)
Switching (200V 10A)
Switching (200V, 10A)
|
ROHM[Rohm]
|
| JZC-32FLA JZC-32FLC |
5A 10A switching capabilities.
|
HuaXinAn Electronics CO...
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
