| PART |
Description |
Maker |
| RFK25P08 RFH25P08 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
Samsung semiconductor
International Rectifier
Intersil Corporation
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| UTT25N08G-TN3-R UTT25N08G-TN3-T UTT25N08L-TN3-T UT |
25A, 80V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| HIP408206 HIP4082IPZ HIP4082 HIP4082IB HIP4082IBZ |
80V, 1.25A Peak Current H-Bridge FET Driver
|
INTERSIL[Intersil Corporation]
|
| JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP2N10L RFP2N08L FN2872 |
From old datasheet system
2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STD25NF10 STD25NF10T4 |
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL MOSFET
|
STMicroelectronics
ST Microelectronics
|
| GBJ25005-G GBJ2501-G GBJ2502-G GBJ2504-G |
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=25A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=25A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=25A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=25A
|
Comchip Technology
|
| CDSUR4448-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
| SBT250-10J |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 25A Rectifier
|
Sanyo Semicon Device
|
