| PART |
Description |
Maker |
| MP4703 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
ETC[ETC]
|
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| PM50502C |
SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| M67799SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM4575J |
PM4575J
Silicon N-Channel Power MOS FET Module
|
HITACHI
|
| M68757H 68757H |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68741 68741 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W，便携式收音机调
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M68745L 68745L |
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3.8W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
