PART |
Description |
Maker |
GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
UN2226 0687 UNR2226UN2226 |
UNR2226 (UN2226) - NPN Transistor with built-in Resistor From old datasheet system Transistors with built-in Resistor
|
Matsshita / Panasonic
|
DTD113Z-AL3-6-R DTD113ZL-AE3-6-R DTD114E-AE3-R DTD |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) npn型数字晶体管(内置偏压电阻) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT-IN RESISTORS)
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters From old datasheet system GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TG2216TU |
RF SPDT Switch TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor Toshiba Corporation
|
CMY91 Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) 砷化镓微波单片集成电路(砷化镓混频器,集成中频放大器的移动通信 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫,级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc. http://
|
STA475A06 STA475A |
Sink Driver Array With Built-in Avalanche Diode NPN Darlington With built-in avalanche diode
|
Sanken electric
|
SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|