| PART |
Description |
Maker |
| AH284-YL |
V(cc): 24V; I(peak): 400-500mA; 550-800mW; hall-effect smart fan motor controller
|
Anachip
|
| HCPL-6250 HCPL-625K HCPL-625X 5962-8876801PA 5962- |
Hermetically Sealed. Low If. Wide Vcc. Logic Gate Optocouplers 密封。如果低。宽的VCC。逻辑门光电耦合
HCPL-523K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-523K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876905K2A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876906KFC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NX8570SC803-BA NX8570SC997-BA NX8570 NX8570SC303-B |
DIODE ZENER SINGLE 500mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOD-123 3K/REEL
Single Output LDO, 100mA, Fixed(1.8V), Low Quiescent Current, Over Current Limitation 5-SOT-23 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 100mA, Fixed(1.2V), Low Quiescent Current, Over Current Limitation 5-SOT-23 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.8V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Dual-Output Low-Dropout (LDO) Voltage Regulators 28-HTSSOP 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Automotive Catalog Ultralow-Power 100-mA Low-Dropout Linear Regulator 5-SOT-23 -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.8V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
CONVERTER DC-DC 10W 12V/15V SGL 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Enhanced Product Fast-Transient-Response 1-A Low-Dropout Voltage Regulators 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
CURRENT LIMITER INRSH 10 OHM 20% 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(3.3V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
H8/SLP Series, 38799 Group, 4-ch 14-bit PWM, 2-ch 16-bit TPU, 16-bit AEC, RTC FP-100U; Vcc= 1.8 to 3.6 volts, Temp= -20 to 75 C; Package: PLQP0100KB-A 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Indicator Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
H8/Tiny Series, 36024 Group, WDTO TNP-48; Vcc= 3.0 to 5.5 volts, Temp= -20 to 75 C; Package: PVQN0048KA-A 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(2.8V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
PTCE 4C 4#20 PIN PLUG
TVS BI-DIR 27V 1500W DO-201
Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:20-39
Single Output LDO, 1.0A, Fixed(2.7V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Adj.(1.5 to 5.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
Single Output LDO, 100mA, Fixed(2.5V), Low Quiescent Current, Over Current Limitation 5-SOT-23
Single Output LDO, 1.0A, Fixed(5.0V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
MICRO HDW M2 RoHS Compliant: No
Single Output LDO, 1.0A, Fixed(2.7V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
CABLE 18/4 STR BC CMR GRY
PTSE 15C 1#16,14#20 PIN PLUG RoHS Compliant: No
Single Output LDO, 1.0A, Adj.(1.5 to 5.5V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
PTSE 18C 18#20 PIN RECP
Single Output LDO, 1.0A, Fixed(2.5V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(3.3V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(3.0V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
Automotive Catalog Fast Transient-Response 1-A Low-Dropout Voltage Regulators 20-HTSSOP -40 to 125
Automotive Catalog Dual-Output Low-Dropout Voltage Regulators 28-HTSSOP -40 to 125
CONVERTER DC-DC 10W 24V/12V SGL
CONVERTER DC-DC 10W 12V/5V SGL
Single Output LDO, 100mA, Adj.(1.2 to 5.5V), Low Quiescent Current, Over Current Limitation 5-SOT-23
Single Output LDO, 1.0A, Fixed(3.0V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(5.0V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
CONNECTOR ACCESSORY
Single Output LDO, 1.0A, Fixed(2.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
|
California Eastern Laboratories, Inc.
线性稳
http://
CEL[California Eastern Labs]
|
| 5962-8876904KYA 5962-8876904KYC 5962-8876904KPA 59 |
5962-8876801PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
|
Agilent (Hewlett-Packard)
|
| PD110-23HA PD110-40LC PD110-42LA PD110-45-1LC PD11 |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.8A, Imax 10.0A. Output #2: Vnom 12V, Imax 5A, Ipeak 9.0A
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.8A, Imax 10.0A. Output #2: Vnom 12V, Imax 5A, Ipeak 9.0A. Output #3: Vnom -12V, Imin 0A, Imax 1A. Output #4: Vnom -5V Imin 0A, Imax 1A.
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.8A, Imax 10.0A. Output #2: Vnom 12V, Imax 5A, Ipeak 9.0A. Output #3: Vnom -12V, Imin 0A, Imax 1A. Output #4: Vnom 12V Imin 0A, Imax 1A.
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.8A, Imax 10.0A. Output #2: Vnom 12V, Imax 5A, Ipeak 9.0A. Output #3: Vnom -12V, Imin 0A, Imax 1A. Output #4: Vnom 24V Imin 0A, Imax 3A.
|
International Power Sources
|
| APL5551KI-TR APL5551 APL5551KAI-TR APL5551KAI-TRL |
Dual Channel 500mA/500mA Regulator Reset IC
|
ANPEC[Anpec Electronics Coropration]
|
| APL5551 |
Dual Channel 500mA/500mA Regulator Reset IC
|
Anpec Electronics
|
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| SY100E417JCTR SY100E417JC SY100E417 |
GIGATRUE 550 CAT PATCH CBL NO BOOT 50FT YW 25 PK
GIGATRUE 550 CAT PATCH CBL NO BOOT 20FT YW 25 PK
QUINT LVPECL-TO-PECL OR PECL-TO-LVPECL TRANSLATOR
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
|
