PART |
Description |
Maker |
2SA1291 |
60V/10A High-Speed Switching Applications
|
Sanyo Semicon Device
|
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1290 |
60V/7A High-Speed Switching Applications 60V/7A高速开关应
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
2SC5103TLQ |
High speed switching transistor (60V, 5A)
|
Rohm
|
2SA207311 |
High voltage discharge, High speed switching,Low Noise (-60V, -3A)
|
Rohm
|
2SA207209 2SA2072-09 |
High voltage discharge, High speed switching, Low Noise (-60V, −3A)
|
Rohm
|
RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
2SA2073 |
High voltage discharge, High speed switching, Low Noise (−60V, −3A)
|
Rohm
|
RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FS70UMJ-06 |
Power MOSFETs: FS Series, Low Voltage, 60V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|