PART |
Description |
Maker |
L6895-1006 L6895-10 |
Infrared LED High-power LED with miniature package
|
Hamamatsu Corporation
|
HIR30-01C HIR30-01C_S16 HIR30-01C/S16 HIR30-01C-S1 |
High Power Infrared LED
|
Everlight Electronics C... Everlight Electronics Co., Ltd
|
HIR5393C HIR5393C_L223 HIR5393C/L223 |
High Power Infrared LED
|
Everlight Electronics Co., Ltd
|
L643706 L6437-01 |
Infrared LED High radiant output GaAs LED with position reference hole
|
Hamamatsu Corporation
|
STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
SMT735 |
High Performance Infrared TOP IR LED
|
List of Unclassifed Man...
|
SMT810 |
High Performance Infrared TOP IR LED
|
List of Unclassifed Manufacturers ETC
|
TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极 PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
SMC750 |
high performance infrared smd led on ceramics
|
Roithner LaserTechnik G...
|
QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|