| PART |
Description |
Maker |
| EAIST3045A1 |
High Power Infrared LED
|
Everlight Electronics C...
|
| EAILP03SXEA0 |
High Power Infrared LED
|
Everlight Electronics C...
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| HSDL-4200 HSDL-42001 HSDL-4220 |
High-Performance T-13/4 (5mm) TS alGaAs Infrared (875nm) Lamp 5 mm, 1 ELEMENT, INFRARED LED, 875 nm
High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
|
Lite-On Technology, Corp.
Agilent(Hewlett-Packard)
|
| L643706 L6437-01 |
Infrared LED High radiant output GaAs LED with position reference hole
|
Hamamatsu Corporation
|
| IR333-H0-L10 IR333/H0/L10 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
5mm Infrared LED , T-1 3/4
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
