| PART |
Description |
Maker |
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
SOCKET, 56 WAYSOCKET, 56 WAY; Ways, No. of:56; Colour:Grey; Current rating:8.5A; Dielectric strength, VAC:1800V; Resistance, insulation:5000MR; Voltage, working:125V
PLUG, 56 WAYPLUG, 56 WAY; Ways, No. of:56; Colour:Grey; Contacts, No. of:56; Current rating:8.5A; Dielectric strength, VAC:1800V; Poles, No. of:56; Resistance, insulation:5000MR; Voltage, working:125V
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
Vanguard International Semiconductor Corporation
|
| IRFP440 |
Dynamic dv/dt Rating
|
New Jersey Semi-Conductor P...
|
| Z8681AB1YN |
Leaded Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Fast Acting; Voltage Rating:250V; Body Material:Ceramic; Diameter:6.985mm; Fuse Size/Group:1/4 x 1-1/4 " RoHS Compliant: Yes 8位微控制
|
东电?中国)投资有限公司
|
| IRFBE30 |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co.,...
|
| SIHF630-E3 IRF630 |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IC41C16105 IC41LV16105 IC41LV16105-60TI IC41C16105 |
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 100万166兆）动态RAM的快速页面模
DYNAMIC RAM, FPM DRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ICSI
ETC[ETC]
Integrated Circuit Solution Inc
|
| IC41C82052S IC41LV82052S IC41C82052S-50J IC41C8205 |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| STD4NA40 STD4NA40-T4 STD4NA40-1 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Leaded Cartridge Fuse; Current Rating:500mA; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| ASC-3.3S ASC-12S |
30W Ul t raminiature Modular Swi tching Power Suppl ies
|
Astrodyne Corporation
|
| MSC23B2321D-XXDS4 MSC23B2321D MSC23B2321D-XXBS4 |
From old datasheet system
2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
4PDT 5A MINI 24VAC
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
