PART |
Description |
Maker |
IRF520L IRF520NSTRR IRF520NSTRL |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF3710 IRF3710PBF |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条) Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFR9110TRL IRFU9110 IRFR9110 |
-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
IRF540NL IRF540NS IRF540NSTRR IRF540NLPBF IRF540NS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) Power MOSFET(Vdss=100V/ Rds(on)=44mohm/ Id=33A)
|
IRF[International Rectifier]
|
IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.185ohm,身份证\u003d 10A条) 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|
MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN Power 2A 100V Darlington PNP Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
|
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
|
Infineon Technologies AG
|