| PART |
Description |
Maker |
| UPD5555 UPD5555C UPD5555G2 D5555C |
CMOS Timer
MOS INTEGRATED CIRCUIT
|
NEC Electronics
NEC[NEC]
|
| HS9-82C54RH-Q |
Radiation Hardened CMOS Programmable Interval Timer 3 TIMER(S), PROGRAMMABLE TIMER, CDFP24
|
Intersil, Corp.
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55NEM216ASTV55 TC55NEM216ASTV70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V4366FF TC55V4366FF-133 TC55V4366FF-150 TC55V4 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58FVB160A TC58FVB160AXB TC58FVB160AXB-10 TC58FVB |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD6451AGT-101 UPD6451ACX-001 UPD6451AGT-301 UPD64 |
MOS INTEGRATED CIRCUIT CMOS LSI FOR 12lines X 24 columns CHARACTER DISPLAY ON SCREEN
|
NEC[NEC]
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MC14536 MC14536B MC14536BCP MC14536BDW MC14536BDWR |
Programmable Timer
Programmable Timer 1 TIMER(S), PROGRAMMABLE TIMER, PDSO16
Programmable Timer 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DIVIDE BY N COUNTER, PDIP16
|
ONSEMI[ON Semiconductor]
|
