| PART |
Description |
Maker |
| TA4012AFE |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TA1218F TA1218N TA1218 |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TA2159F |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TA6.42FNG |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TA1360ANG |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic 东芝双极线性集成电路硅单片
|
Toshiba, Corp.
|
| TA8261AH |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
Max Power 40 W BTL 4CH Audio Power IC
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT8G132 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT10J321 GT10.321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20J101 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
