| PART |
Description |
Maker |
| STK621-017 |
TENTATIVE
|
Sanyo Semicon Device
|
| STK621-018 |
TENTATIVE
|
Sanyo Semicon Device
|
| P0430WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| 2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TC7SET86F02 TC7SET86F TC7SET86FU |
TENTATIVE (UNDER DEVELOPMENT) TOSHIBA CMOS DIGITAL INTERATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TAN-325 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2159F
|
TOSHIBA
|
| TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我（直）|92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我（直）|2
|
KEMET, Corp.
Electronic Theatre Controls, Inc.
|
