| PART |
Description |
Maker |
| CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory
70ns 1M-bit CMOS flash memory
55ns 1M-bit CMOS flash memory
45ns 1M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CAT28F001 CAT28F001P-12BT CAT28F001TI-70BT CAT28F0 |
90ns 1M-bit CMOS boot block flash memory
70ns 1M-bit CMOS boot block flash memory
150ns 1M-bit CMOS boot block flash memory
120ns 1M-bit CMOS boot block flash memory
120ns 1M-bit CMOS Boot Block Flash Memory
1 Megabit CMOS Boot Block Flash Memory
|
CATALYST[Catalyst Semiconductor]
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| EN29LV800B70RSIP EN29LV800T70RSIP EN29LV800B70RS E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 8兆位024K × 812k × 16位）闪存引导扇区闪存，CMOS 3.0伏，
122 x 32 pixel format, LED or EL Backlight available
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| EN29LV640TT-90TIP EN29LV640TB-90TIP EN29LV640TB-70 |
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 64兆位米8分x 16位）闪存引导扇区闪存，CMOS 3.0伏，
|
Eon Silicon Solution Inc.
Eon Silicon Solution, Inc.
|
| CAT28F512 CAT28F512TRI-12T CAT28F512TRI-15T CAT28F |
120ns 512K-bit CMOS flash memory
90ns 512K-bit CMOS flash memory
150ns 512K-bit CMOS flash memory
512K-Bit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| W39V080FA W39V080FAP W39V080FAT W39V080FAQZ W39V08 |
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PQCC32
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| AM70PDL127BDH85I AM70PDL129BDH AM70PDLI27BDH AM70P |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
|
SPANSION[SPANSION]
|
