| PART |
Description |
Maker |
| CMKD6263 |
ULTRAmini. TRIPLE ISOLATED HIGH VOLTAGE SCHOTTKY DIODE 0.015 A, 70 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| 2SC5590 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR MULTI .MEDIA & HDTV HIG
|
TOSHIBA
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| BZX84C2V4TW-AU BZX84C3V3TW-AU BZX84C3V0TW-AU BZX84 |
TRIPLE ISOLATED SURFACE MOUNT ZENER DIODES
|
Pan Jit International Inc.
Pan Jit International I...
|
| CMKD600110 |
SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES
|
Central Semiconductor Corp
|
| CMXD4448 |
SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMXD2004TO10 |
SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES
|
Central Semiconductor Corp
|
| CMXZ30VTO CMXZ33VTO CMXZ24VTO CMXZ18VTO CMXZ20VTO |
SURFACE MOUNT, TRIPLE, ISOLATED OPPOSING SILICON ZENER DIODES
SURFACE MOUNT, TRIPLE, ISOLATED OPPOSING SILICON ZENER DIODES
|
Central Semiconductor Corp
Central Semiconductor C...
|
| CMUSH2-4 CMUSH2-4A CMUSH2-4S CMUSH2-4C |
SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| CMKD6263DO |
ULTRAmini. DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODES
|
Central Semiconductor Corp
|
