| PART |
Description |
Maker |
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
| 28C16AT/L 28C16ATI/P 28C16AFI/L 28C16AFT/L 28C16AF |
16K (2K x 8) CMOS EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Microchip Technology Inc.
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EDD1216AATA-5C-E EDD1216AATA-5 EDD1216AATA-5B-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
