| PART |
Description |
Maker |
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| U1GU44 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2595 |
Silicon N-Channel MOS FET UHF Power Amplifier
From old datasheet system
Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
| 2SK3210 2SK3210S 2SK3210L |
Silicon N Channel MOS FET High Speed Power Switching
From old datasheet system
Silicon NPN Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SC2073A01 2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BU4523AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUJ101A |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PHE13005 |
Silicon Diffused Power Transistor
|
Philips
|
| BUT11F |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
