PART |
Description |
Maker |
BF1202WR BF1202R BF1202 |
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BF120210 BF1202.215 |
N-channel dual-gate PoLo MOS-FETs N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|