| PART |
Description |
Maker |
| SPLPL90 |
Impuls-Laserdiode im Plastikgeh?se 25 W Spitzenleistung Pulsed Laser Diode in Plastic Package 25 W Peak PowerLead (Pb) Free Product - RoHS Compliant
Impuls-Laserdiode im Plastikgeh漉se 25 W Spitzenleistung Pulsed Laser Diode in Plastic Package 25 W Peak PowerLead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| DL-3147-021 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
