PART |
Description |
Maker |
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
GE28F640J3 |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
JS28F128J3A |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
28F128J3A 28F320J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
JS28F640P30T85 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
28F320J5 28F640J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
|
Intel
|
E28F320J5-100 DA28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns
|
Intel
|
28F3204W30 RD28F6408W30T85 28F320W30 28F6408W30 28 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
INTEL[Intel Corporation]
|
RD28F3204W30B70 GT28F640W30T85 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
Intel Corporation
|
RD38F1010C0ZTL0 RD38F1020C0ZTL0 RD28F1602C3T110 RD |
3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
|
INTEL[Intel Corporation]
|
TE28F640C3 TE28F160C3 TE28F800C3 28F160C3 28F320C3 |
3 Volt Intel Advanced Boot Block Flash Memory IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5,
|
INTEL[Intel Corporation] Intel Corp.
|
AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash EEPROM EEPROM
|
TE Connectivity, Ltd.
|