| PART |
Description |
Maker |
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| 2SC3783 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) npn型三重扩散型（高速，高压开关，开关稳压器，高速DC - DC转换器应用）
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING SWITCHING REGULATOR HIGH SPEED DC-DC CONVERTER APPLICATIONS)
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR/ HIGH SPEED DC-DC CONVERTER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| 2SK2348 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| LTC4440-5 |
High Speed, High Voltage, High Side Gate Driver
|
linear
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
