| PART |
Description |
Maker |
| SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses & fastest Switching
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
| MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM |
PNP EXPITAXIAL PLANAR TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2N2904 JANTX2N2905A JAN2N2904 JAN2N2905 2N2904A 2N |
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
PNP Transistor
PNP SWITCHING SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
3 Pin 1.5A Fixed 12V Positive Voltage Regulator 3-TO-220 0 to 125 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
MICROSEMI CORP-LAWRENCE
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| SPA11N60C2 SPB11N60C2 SPP11N60C2 |
Cool MOS?/a> Power Transistor
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS??Power Transistor
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
|
INFINEON[Infineon Technologies AG]
|
| CP611 |
Power Transistor PNP - Amp / Switch Transistor Chip
Chip Form: SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| FN1L4Z FN1L4Z-L FN1L4Z-T2B FN1L4ZM62 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 346
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor
|
NEC, Corp.
NEC[NEC]
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
