| PART |
Description |
Maker |
| HY27SS08561A HY27US16561A |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| HY5S5B6GLFP-SE HY5S5B6GLF-H |
256Mbit (16Mx16bit) Mobile SDR Memory
16M X 16 SYNCHRONOUS DRAM, 6.5 ns, PBGA54
|
http://
HYNIX SEMICONDUCTOR INC
|
| HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| HYB25L256160AF HYB25L256160AF-75 HYE25L256160AF HY |
256MBit Mobile-RAM
|
INFINEON[Infineon Technologies AG]
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-L3M |
Mobile DDR SDRAM 256Mbit (16M x 16bit)
|
Hynix Semiconductor
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| HYB25D256160CC-6 HYB25D256400CC-5 HYB25D256400CC-6 |
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR400 (3-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04
DDR SDRAM Components - 256Mb (16Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
|
Infineon
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
