| PART |
Description |
Maker |
| BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MBT3904DW1T1 MBT3904DW1T1_D ON0485 |
SOT-63/SC-8 CASE 419B STYLE 1
From old datasheet system
|
ON Semi
|
| MBD110DWT1_D ON0400 |
CASE 419B-1, STYLE 6 SOT-363
From old datasheet system
|
ON Semi
|
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BAT54WT1 ON0130 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
From old datasheet system
CASE 419?2, STYLE 2 SOT-23 (SC-0)
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB
CASE 31808/ STYLE 8 SOT23 (TO236AB)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 6146 |
Case, Briefcase, Style, Large
|
Pomona Electronics
|
| 2N5457 ON0060 |
CASE 29-4, STYLE TO-2 (TO-26AA)
From old datasheet system
|
ON Semi
|
| 2MBI100NE-120 |
CAPACITOR, CASE A, 22UF, 2.5V; Application:Solid; Capacitance:22uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:2.5V; Capacitor dielectric type:Niobium Oxide; Case style:A; Depth, external:1.6mm; Length / Height, RoHS Compliant: Yes
IGBT MODULE ( N series )
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
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