| PART |
Description |
Maker |
| BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343
|
Infineon
|
| LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
From old datasheet system
|
Linear Technology Corporation
|
| LT5515 |
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
|
Linear
|
| SPM3212 |
GaAs MMICs
|
SANYO
|
| SPM5001 |
GaAs MMICs
RF Double Balanced Mixer
|
SANYO
|
| SP8908KGMP1T SP8908KGMP1S SP8908KG SP8908 |
5GHZ 48 Fixed Modulus Divider 5GHz8个固定的模数分频
5GHZ ÷8 Fixed Modulus Divider(5GHZ ÷8超高速低功耗固定模数除法器)
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| RTC6691 |
silicon-germanium (SiGe) power amplifier
|
RichWave
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| ZL4081 ZL40813 ZL40813DCE ZL40814 ZL40814DCE ZL408 |
13.5GHz Fixed Modulus divide 16 Prescaler
13.5GHz Fixed Modulus Dividers
|
ZARLINK[Zarlink Semiconductor Inc]
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
