| PART |
Description |
Maker |
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| ABP9001-868 ABP9002-806 ABP9002-700 ABM3001-868 AB |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
Vishay Beyschlag
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| SDM100K30L-7 SDM100K30L08 |
DIODE SCHOTTKY 30V 1.0A SOD323 1 A, 30 V, SILICON, SIGNAL DIODE
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Diodes, Inc.
Diodes Incorporated
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
