| PART |
Description |
Maker |
| SD214DE 70294 |
N-Channel Lateral DMOS FETs
From old datasheet system
|
Vishay
|
| UPF1010 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
| UPF1080 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
| SD210DE |
(SD210DE / SD214DE) High Speed N-channel Lateral Dmos Fet Switch
|
Linear Integrated Systems
|
| VN0109NE |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
|
Supertex Inc
|
| VN0106NE VN0109NE |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
|
Supertex Inc
SUTEX[Supertex, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| L6115 L6114 |
QUAD 100 V, DMOS SWITCH
|
STMICROELECTRONICS[STMicroelectronics]
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
