PART |
Description |
Maker |
SA7025 SA7025DK |
Low-voltage 1GHz fractional-N synthesizer
|
NXP Semiconductors
|
SA620DK SA620 |
Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
|
PHILIPS[Philips Semiconductors]
|
SA8016 |
2.5GHz low voltage fractional-N
|
Philips
|
SA7026 SA7026DH |
1.3GHz low voltage fractional-N dual frequency synthesizer
|
NXP Semiconductors
|
BF2030 Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider 1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17,32/33多模数分频器 TV 4C 4#16 PIN WALL RECP 1GHz的16/17,32/33多模数分频器 1GHz 16/17/ 32/33 Multi-Modulus Divider 1GHz 16/17 / 32/33 Multi-Modulus Divider 1GHz 16/17 32/33 Multi-Modulus Divider 1GHz 16/17, 32/33 Multi-Modulus Divider 1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider 1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp. MITEL[Mitel Networks Corporation] Mitel Semiconductor
|
D2229UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited Seme LAB
|
D2282UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
ABA3100S3TR |
1GHz Balanced Low Noise Linear Amplifier
|
Skyworks Solutions
|