| PART |
Description |
Maker |
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| STGB10NB37LZ 6207 |
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FGP10N60UNDF |
600V, 10A Short Circuit Rated IGBT
|
Fairchild Semiconductor
|
| RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGP10NB60SD GP10NB60SD |
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| GP10NC60HD STGB10NC60HD STGB10NC60HD0710 STGF10NC6 |
N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT
|
STMicroelectronics
|
| STGF14NC60KD STGF10NC60KD07 STGP10NC60KD GB10NC60K |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| 7MBR10NF12 7MBR10NF120 |
Converter diode bridge dynamic brake circuit
1201200V/10A/PIM 10 A, 1200 V, N-CHANNEL IGBT
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| PS21963-A |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
