| PART |
Description |
Maker |
| 2SC5398 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE MICRO
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) 对于Llow频率Amplifty应用Silicom是npn型外延式微型（框式）
|
Isahaya Electronics Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| RN6001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| 2SC1967 SC1967 |
RF POWER TRANSISTOR(NPN EPITAXAIL PLANAR TYPE)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SD2258 2SD2258TENTATIVE |
2SD2258 (Tentative) - Silicon NPN epitaxial planer type
Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| 2SC1173 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3908 SC3908 |
22 A, 20 V, NPN, Si, POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC4838 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
