| PART |
Description |
Maker |
| IRF220-223 IRF221 IRF222 IRF223 IRF621 IRF623 IRF2 |
N-Channel Power MOSFETs 7A 150-200V
N-Channel Power MOSFETs, 7A, 150-200V
N-Channel Power MOSFETs/ 7A/ 150-200V
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET
|
ST Microelectronics
|
| IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| AZ987 AZ987-1C-10DE AZ987-1C-12DE AZ987-1A-10DE AZ |
CAP 27PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 30放大器微型功率继电器用于汽车
CAP 33PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
CAP 22PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
30 AMP SUBMINIATURE POWER RELAY FOR AUTOMOTIVE USE
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
ZETTLER electronics
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| IRF640S 6774 |
N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
| S8JX-G10012 S8JX-G10012D S8JX-G05005 S8JX-G05005D |
Switch Mode Power Supply
Wide Variety of Output Voltage Variations: 48 V for 15 to 150 W, and 5 or 12 V for 150 W
|
Omron Electronics LLC
|
| IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
