| PART |
Description |
Maker |
| BSP16T1_D ON0219 |
SOT-223 PACKAGE NPN SILICON
From old datasheet system
|
ON Semi
|
| PZTA14T1 PZTA14T1_D ON2782 |
From old datasheet system
SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
|
MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
|
| BSP16T1 |
SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| PZT5551L-B-AA3-R PZT5551-A-AA3-R PZT5551L-A-AA3-R |
0.6 A, 160 V, NPN, Si, POWER TRANSISTOR LEAD FREE PACKAGE-4
0.6 A, 160 V, NPN, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| 20CJQ100 20CJQ100TR |
100V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| STN4NF06L |
N-channel 60 V, 0.07 Ohm, 4 A STripFET(TM) 2 Power MOSFET in SOT-223 package
|
ST Microelectronics
|
| BSP317Q67000-S94 |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
|
EM Microelectronic
|
| IRFL1006TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| BUK481-100AT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|的SOT - 223
|
Cooper Bussmann, Inc.
|
| PHT8N06LTT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
NXP Semiconductors N.V.
|
| FZT1053ATA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
75V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT-223
|
Diodes Incorporated
|
