PART |
Description |
Maker |
M63824KP |
(M63824xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
M54585WP |
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
M63820FP M63820KP |
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
M54523FP M54523P |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M54562FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
M63800FP |
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
M63840FP M63840KP M63840P |
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
|
Mitsubishi Electric Semiconductor
|
LB1275 |
7-Unit, Darlington Transistor Array 7-Unit Darlington Transistor Array 7-Unit,Darlington Transistor Array(7单元达林顿晶体管阵列)
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
LB1272 |
6-Unit / Darlington Transistor Array 6-Unit, Darlington Transistor Array
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|