| PART |
Description |
Maker |
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| 021-3220 021-4510 021-4520 021-2220 042-3300 021-4 |
KNOB BLACK
KNOB GREY
ZIFFERNSCHEIBE TYP 3 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 0 KNOPFDM 14.5
PFEILSCHEIBE DM36.0 SCHWARZ
ZIFFERNSCHEIBE TYP 1 KNOPFDM 36.0
ZIFFERNSCHEIBE TYP 2 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 1 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 9 KNOPFDM 14.5 ZIFFERNSCHEIBE典型9 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 8 KNOPFDM 21.0 ZIFFERNSCHEIBE典型8 KNOPFDM 21.0
|
EPCOS AG
|
| LA4422 |
5.8W typ AF Power Amplifier for Car Stereos, Car Radios
From old datasheet system
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
| VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
| SST29VE010-120-3I-EH SST29LE010-90-4C-N SST29VE010 |
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: No error against RF noise
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Open drain type
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type
1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8）页模式EEPROM
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type 1兆位28K的8）页模式的EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8）页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8）页模式EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8）页模式EEPROM
Logic IC; Function: Quad. Differential Line Receivers with 3-state outputs (EIA RS-422A, 423A); Package: DIP; Remarks: Interface IC 1兆位28K的8）页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8）页模式的EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
|
Silicon Storage Technology, Inc.
|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
