| PART |
Description |
Maker |
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V |
1,048,576 x 16 - Bit CMOS EDO DRAM
1,048,576 x 16 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| TC514402AP |
1,048,576 x 4 BIT DYNAMIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| MSC23V13258D-XXBS2 |
1,048,576,Word X 32 Bit DYNAMIC RAM MODULE
|
OKI electronic components
|
| HYB514400BTL-70 HYB514400BTL-60 HYB514400BTL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
From old datasheet system
|
Infineon
|
| MD56V62160E-XXTA MD56V62160E-10 MD56V62160E-7 |
4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
|
| MD56V62160H MD56V62160 |
4-Bank x 1048576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| MD56V62160 |
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 4，银行甲1048576字16位同步动态随机存储器
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM51V1000A-10 |
1,048,576-Word 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word ??1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM5116160 |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
|
