| PART |
Description |
Maker |
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| PU3124 PU4124 PU4424 |
V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE, POWER AMPLIFIER, SWITCHING
|
Panasonic Semiconductor
|
| BUT11AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BU506DF BU506F |
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
|
| BU2506 BU2506DF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BUJ103 BUJ103A |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHE13005 |
Silicon Diffused Power Transistor
|
Philips
|
| BUT11APX |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PHE13007 BU2722AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
