| PART |
Description |
Maker |
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| UPC2791TB |
(UPC2791TB / UPC2792TB) SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL
|
| UPC2762TB1 |
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
| 2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| UPC2710TB UPC2710TB-E3 |
122 x 32 pixel format, Compact LCD size
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp.
NEC[NEC]
|
| UPC2708TB-E3-A UPC2708TB |
5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC2771TB |
SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
|
CEL
|
| UPA801 UPA801T UPA801TC UPA801TC-T1 PA801TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NPN Epitaxial Transisitor(NPN外延晶体
|
NEC[NEC]
NEC Corp.
|
