| PART |
Description |
Maker |
| IRF520L IRF520NSTRR IRF520NSTRL |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份证\u003d 1.0安培
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| IRF540N IRF540NPBF |
Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 44mohm，身份证\u003d 33A条）
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BDX53 BDX54C BDX54 BDX53C BDX53A BDX53B BDX54A BDX |
POWER TRANSISTORS(8A.,45-100V,60W) 功率晶体管（8A. ,45 - 100V的，60瓦）
POWER TRANSISTORS(8A./45-100V/60W)
POWER TRANSISTORS(8A.45-100V60W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
|
