| PART |
Description |
Maker |
| MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTDF1C02HD ON2520 ON2519 |
COMPLEMENTARY DUAL TMOS POWER FET
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| MMSF3P03HDR2 |
TMOS P-CHANNEL FIELD EFFECT TRANSISTORS
|
JFETs
|
| MTP50N06V |
TMOS V?Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MTE60N35 MTE60N40 MTE50N45 MTE50N50 |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
|
MOTOROLA[Motorola, Inc]
|
| MTM60N06 MTM55N10 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
