PART |
Description |
Maker |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
BBY53-02L BBY53-02V BBY53-03L BBY53-05W BBY53 BBY5 |
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package Silicon Tuning Diode 硅调谐二极管
|
http:// INFINEON[Infineon Technologies AG]
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KDV149 KDV149B KDV149C KDV149D |
Silicon diode for AM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(AM RADIO BAND TUNING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
BBY52-02W Q62702-B0860 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 3.10 inch width x 1.87 inch depth, Textured Black Finish Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
BBY53-02W BBY53-03W BBY5307 BBY53-02L BBY53-02V |
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE Silicon Tuning Diode
|
Infineon Technologies AG Infineon Technologies A...
|
KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|