| PART |
Description |
Maker |
| BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Vishay Siliconix
Philips Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| 3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
| 3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK324UG 3SK324 |
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
|
Renesas Electronics Corporation
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF997 |
N-channel dual-gate MOS-FET
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SK3019 2SK3019TL |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
