| PART |
Description |
Maker |
| 3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd.
Renesas Electronics Corporation
|
| 2SK2596BX 2SK2596 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2595 |
Silicon N-Channel MOS FET UHF Power Amplifier
From old datasheet system
Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| NE5511279A-T1A-A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Laboratories
|
| NE5511279A-T1A-A NE5511279A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
CEL[California Eastern Labs]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
