| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| UPB1512TU-E2 |
NECs 13 GHz INPUT DIVIDE BY 8 PRESCALER IN FOR SATELLITE COMMUNICATIONS
|
California Eastern Laboratories
|
| NE687M03-T1-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Laboratories
Duracell
|
| NE894M03 |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
| NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| UPA861TD-T3 UPA861TD |
NECs NPN SILICON RF TWIN TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| NE02135 NE021 NE02100 NE02107 NE02107B NE02133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE851M13 NE851M13-T3 |
From old datasheet system
NECs NPN SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NE5520279A-T1 NE5520279A |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC Corp.
NEC[NEC]
|
| NE85634-T1-A NE85633-A NE85618-A NE85618-T1-A NE85 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Duracell
celduc-relais
|
| NE66719-T1 NE66719 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| 2450AT43H0100 |
2.45 GHz Antenna (Wide Bandwidth)
|
Johanson Technology Inc.
|
