| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| AWT6308R |
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module CDMA.4V/28dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| MAX8504 MAX8500 MAX8500ETC MAX8503ETC MAX8502ETC M |
PWM Buck Converters with Bypass FET for N-CDMA/W-CDMA Handsets
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| AWC6340P9 AWC6340Q7 |
HELP CDMA Band Class 0,10 CDMA Power Amplifier Module
|
ANADIGICS, Inc
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| NESG3031M05-T1 NESG3031M05 |
NPN SILICON GERMANIUM RF TRANSISTOR
|
CEL[California Eastern Labs]
|
| BFU760F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
